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PSMN017-60YS MOSFET Transistor

The PSMN017-60YS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PSMN017-60YS transistor as follows.

Circuit diagram symbol of the PSMN017-60YS transistor

PSMN017-60YS Transistor Specification

Transistor Code PSMN017-60YS
Transistor Type MOSFET
Control Channel Type N-Channel
Package LFPAK
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 44A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0157Ohm
Power Dissipation (Maximum) PD 74W
Operating Junction Temperature (Maximum) 175°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 20nC

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