PSMN016-100BS MOSFET Transistor

The PSMN016-100BS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PSMN016-100BS transistor as follows.

PSMN016-100BS Transistor Specification

Transistor Code		PSMN016-100BS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0288Ohm
Power Dissipation (Maximum)	PD	148W
Drain-Source Capacitance		189pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		23nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		40nC

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