PSMN016-100BS MOSFET Transistor

The PSMN016-100BS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PSMN016-100BS transistor as follows.

PSMN016-100BS Transistor Specification

Transistor Code		PSMN016-100BS
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0288Ohm
Power Dissipation (Maximum)	PD	148W
Drain-Source Capacitance		189pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		23nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		40nC

UXPython is not the creator or an official representative of the PSMN016-100BS MOSFET transistor. You can download the official PSMN016-100BS MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

FQB8N60CFTM MOSFET Transistor FQB10N20C MOSFET Transistor FQB2P25TM MOSFET Transistor SSW2N60B MOSFET Transistor FQB13N10LTM MOSFET Transistor FQB2N50TM MOSFET Transistor FQB3N60CTM MOSFET Transistor HFW5N65S MOSFET Transistor FQB16N25TM MOSFET Transistor FQB19N20TM MOSFET Transistor FQB13N50CTM MOSFET Transistor FQB2P40TM MOSFET Transistor FQB13N06LTM MOSFET Transistor FCB110N65F MOSFET Transistor FQB9N08TM MOSFET Transistor FQB7N10LTM MOSFET Transistor PHB45N03LTA MOSFET Transistor FQB5N50TM MOSFET Transistor FCB36N60NTM MOSFET Transistor FQB9N25TM MOSFET Transistor