PSMN013-100YSE MOSFET Transistor

The PSMN013-100YSE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PSMN013-100YSE transistor as follows.

PSMN013-100YSE Transistor Specification

Transistor Code		PSMN013-100YSE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		LFPAK
Transistor SMD Code		13100
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	82A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.013Ohm
Power Dissipation (Maximum)	PD	238W
Drain-Source Capacitance		265pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		23nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		75nC

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