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PS60N60 MOSFET Transistor

The PS60N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PS60N60 transistor as follows.

Circuit diagram symbol of the PS60N60 transistor

PS60N60 Transistor Specification

Transistor Code PS60N60
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 60A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.018Ohm
Power Dissipation (Maximum) PD 110W
Drain-Source Capacitance 400pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 60nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 54nC

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