PPMUT20V3 MOSFET Transistor

The PPMUT20V3 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PPMUT20V3 transistor as follows.

PPMUT20V3 Transistor Specification

Transistor Code		PPMUT20V3
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-323
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	2.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.12Ohm
Power Dissipation (Maximum)	PD	0.35W
Drain-Source Capacitance		155pF
Gate-Threshold Voltage (Maximum)		0.9V

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