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PPMUT20V3 MOSFET Transistor

The PPMUT20V3 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PPMUT20V3 transistor as follows.

Circuit diagram symbol of the PPMUT20V3 transistor

PPMUT20V3 Transistor Specification

Transistor Code PPMUT20V3
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT-323
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 2.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.12Ohm
Power Dissipation (Maximum) PD 0.35W
Drain-Source Capacitance 155pF
Gate-Threshold Voltage (Maximum) 0.9V

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