PPMT50V02 MOSFET Transistor

The PPMT50V02 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PPMT50V02 transistor as follows.

PPMT50V02 Transistor Specification

Transistor Code		PPMT50V02
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-23
Drain-Source Voltage (Maximum)	VDS	50V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.13A
Drain-Source On-State Resistance (Maximum)	RDS(on)	10Ohm
Power Dissipation (Maximum)	PD	0.25W
Drain-Source Capacitance		15pF
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		2V

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