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PPMT30V4 MOSFET Transistor

The PPMT30V4 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PPMT30V4 transistor as follows.

Circuit diagram symbol of the PPMT30V4 transistor

PPMT30V4 Transistor Specification

Transistor Code PPMT30V4
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT-23
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 4.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.06Ohm
Power Dissipation (Maximum) PD 1.4W
Drain-Source Capacitance 110pF
Gate-Threshold Voltage (Maximum) 1.3V

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