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PPMT30V3 MOSFET Transistor

The PPMT30V3 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PPMT30V3 transistor as follows.

Circuit diagram symbol of the PPMT30V3 transistor

PPMT30V3 Transistor Specification

Transistor Code PPMT30V3
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT-23
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.095Ohm
Power Dissipation (Maximum) PD 1.04W
Drain-Source Capacitance 74pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 17nS
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 14nC

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