PPMT20V3 MOSFET Transistor

The PPMT20V3 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PPMT20V3 transistor as follows.

PPMT20V3 Transistor Specification

Transistor Code		PPMT20V3
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-23
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	2.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.11Ohm
Power Dissipation (Maximum)	PD	0.9W
Drain-Source Capacitance		125pF
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		0.9V

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