PPMT12V4 MOSFET Transistor

The PPMT12V4 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PPMT12V4 transistor as follows.

PPMT12V4 Transistor Specification

Transistor Code		PPMT12V4
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-23
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	4.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.045Ohm
Power Dissipation (Maximum)	PD	1.3W
Drain-Source Capacitance		230pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		32nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		7.8nC

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