PPMS8N20V3 MOSFET Transistor

The PPMS8N20V3 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PPMS8N20V3 transistor as follows.

PPMS8N20V3 Transistor Specification

Transistor Code		PPMS8N20V3
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN3X2-8L
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	2.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.11Ohm
Power Dissipation (Maximum)	PD	1.1W
Operating Junction Temperature (Maximum)		150°C
Rise Time		28nS
Gate-Threshold Voltage (Maximum)		0.45V
Total Gate Charge		4.2nC

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