PPMET20V08E MOSFET Transistor

The PPMET20V08E is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PPMET20V08E transistor as follows.

PPMET20V08E Transistor Specification

Transistor Code		PPMET20V08E
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-523
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.85Ohm
Power Dissipation (Maximum)	PD	0.25W
Drain-Source Capacitance		80pF
Gate-Threshold Voltage (Maximum)		1V

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