PPM723T201E0 MOSFET Transistor

The PPM723T201E0 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PPM723T201E0 transistor as follows.

PPM723T201E0 Transistor Specification

Transistor Code		PPM723T201E0
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-723
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	0.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1Ohm
Power Dissipation (Maximum)	PD	0.15W
Drain-Source Capacitance		9pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		4nS
Gate-Threshold Voltage (Maximum)		1.1V
Total Gate Charge		1.4nC

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