PPM6N12V10 MOSFET Transistor

The PPM6N12V10 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PPM6N12V10 transistor as follows.

PPM6N12V10 Transistor Specification

Transistor Code		PPM6N12V10
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN2X2-6L
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.017Ohm
Power Dissipation (Maximum)	PD	2.4W
Drain-Source Capacitance		490pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		21nC

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