PNMTO600V5 MOSFET Transistor

The PNMTO600V5 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PNMTO600V5 transistor as follows.

PNMTO600V5 Transistor Specification

Transistor Code		PNMTO600V5
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	3.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.8Ohm
Power Dissipation (Maximum)	PD	132W
Drain-Source Capacitance		58.4pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		44nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		16.8nC

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