PNMTO600V2 MOSFET Transistor

The PNMTO600V2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PNMTO600V2 transistor as follows.

PNMTO600V2 Transistor Specification

Transistor Code		PNMTO600V2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4.4Ohm
Power Dissipation (Maximum)	PD	56.8W
Drain-Source Capacitance		29pF
Rise Time		14.3nS
Gate-Threshold Voltage (Maximum)		4V

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