PNMT50V02E MOSFET Transistor

The PNMT50V02E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PNMT50V02E transistor as follows.

PNMT50V02E Transistor Specification

Transistor Code		PNMT50V02E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-23
Drain-Source Voltage (Maximum)	VDS	50V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.22A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3Ohm
Power Dissipation (Maximum)	PD	0.35W
Drain-Source Capacitance		15pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		1.6V
Total Gate Charge		2.4nC

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