PNMIP600V1 MOSFET Transistor

The PNMIP600V1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PNMIP600V1 transistor as follows.

PNMIP600V1 Transistor Specification

Transistor Code		PNMIP600V1
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	9Ohm
Power Dissipation (Maximum)	PD	44W
Drain-Source Capacitance		14.5pF
Rise Time		6.7nS
Gate-Threshold Voltage (Maximum)		4V

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