PNMDP600V4 MOSFET Transistor

The PNMDP600V4 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PNMDP600V4 transistor as follows.

PNMDP600V4 Transistor Specification

Transistor Code		PNMDP600V4
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.2Ohm
Power Dissipation (Maximum)	PD	104W
Drain-Source Capacitance		51pF
Rise Time		28.7nS
Gate-Threshold Voltage (Maximum)		4V

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