PNMDP600V2 MOSFET Transistor

The PNMDP600V2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PNMDP600V2 transistor as follows.

PNMDP600V2 Transistor Specification

Transistor Code		PNMDP600V2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4.4Ohm
Power Dissipation (Maximum)	PD	56.8W
Drain-Source Capacitance		29pF
Rise Time		14.3nS
Gate-Threshold Voltage (Maximum)		4V

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