PNMDP600V1 MOSFET Transistor

The PNMDP600V1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PNMDP600V1 transistor as follows.

PNMDP600V1 Transistor Specification

Transistor Code		PNMDP600V1
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	9Ohm
Power Dissipation (Maximum)	PD	44W
Drain-Source Capacitance		14.5pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6.7nS
Gate-Threshold Voltage (Maximum)		4V

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