PMZB950UPE MOSFET Transistor

The PMZB950UPE is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMZB950UPE transistor as follows.

PMZB950UPE Transistor Specification

Transistor Code		PMZB950UPE
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN1006B-3
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.4Ohm
Power Dissipation (Maximum)	PD	0.36W
Drain-Source Capacitance		14pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		0.95V
Total Gate Charge		1.19nC

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