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PMZB950UPE MOSFET Transistor

The PMZB950UPE is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMZB950UPE transistor as follows.

Circuit diagram symbol of the PMZB950UPE transistor

PMZB950UPE Transistor Specification

Transistor Code PMZB950UPE
Transistor Type MOSFET
Control Channel Type P-Channel
Package DFN1006B-3
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 0.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.4Ohm
Power Dissipation (Maximum) PD 0.36W
Drain-Source Capacitance 14pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 5nS
Gate-Threshold Voltage (Maximum) 0.95V
Total Gate Charge 1.19nC

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