PMZB670UPE MOSFET Transistor

The PMZB670UPE is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMZB670UPE transistor as follows.

PMZB670UPE Transistor Specification

Transistor Code		PMZB670UPE
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN1006B-3
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.68A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.85Ohm
Power Dissipation (Maximum)	PD	0.36W
Drain-Source Capacitance		21pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		30nS
Gate-Threshold Voltage (Maximum)		1.3V
Total Gate Charge		0.76nC

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