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PMZB550UNE MOSFET Transistor

The PMZB550UNE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMZB550UNE transistor as follows.

Circuit diagram symbol of the PMZB550UNE transistor

PMZB550UNE Transistor Specification

Transistor Code PMZB550UNE
Transistor Type MOSFET
Control Channel Type N-Channel
Package DFN1006B-3
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 0.59A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.67Ohm
Power Dissipation (Maximum) PD 0.31W
Drain-Source Capacitance 5.8pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 7nS
Gate-Threshold Voltage (Maximum) 0.95V
Total Gate Charge 0.6nC

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