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PMZB320UPE MOSFET Transistor

The PMZB320UPE is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMZB320UPE transistor as follows.

Circuit diagram symbol of the PMZB320UPE transistor

PMZB320UPE Transistor Specification

Transistor Code PMZB320UPE
Transistor Type MOSFET
Control Channel Type P-Channel
Package DFN1006B-3
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 1A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.51Ohm
Power Dissipation (Maximum) PD 0.35W
Drain-Source Capacitance 11pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 6nS
Gate-Threshold Voltage (Maximum) 0.95V
Total Gate Charge 1.4nC

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