PMZ600UNE MOSFET Transistor

The PMZ600UNE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMZ600UNE transistor as follows.

PMZ600UNE Transistor Specification

Transistor Code		PMZ600UNE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN1006-3
Transistor SMD Code		SA
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.62Ohm
Power Dissipation (Maximum)	PD	0.36W
Drain-Source Capacitance		5.4pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9.2nS
Gate-Threshold Voltage (Maximum)		0.95V
Total Gate Charge		0.4nC

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