PMZ350UPE MOSFET Transistor

The PMZ350UPE is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMZ350UPE transistor as follows.

PMZ350UPE Transistor Specification

Transistor Code		PMZ350UPE
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN1006-3
Transistor SMD Code		ZP
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.45Ohm
Power Dissipation (Maximum)	PD	0.36W
Drain-Source Capacitance		34pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		0.95V
Total Gate Charge		1.3nC

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