PMZ200UNE MOSFET Transistor

The PMZ200UNE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMZ200UNE transistor as follows.

PMZ200UNE Transistor Specification

Transistor Code		PMZ200UNE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN1006-3
Transistor SMD Code		ZV
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	1.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.25Ohm
Power Dissipation (Maximum)	PD	0.35W
Drain-Source Capacitance		11pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		0.95V
Total Gate Charge		1.6nC

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