PMZ1000UN MOSFET Transistor

The PMZ1000UN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMZ1000UN transistor as follows.

PMZ1000UN Transistor Specification

Transistor Code		PMZ1000UN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT883
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.48A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1Ohm
Power Dissipation (Maximum)	PD	0.35W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		0.95V

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