PMXB65UPE MOSFET Transistor

The PMXB65UPE is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMXB65UPE transistor as follows.

PMXB65UPE Transistor Specification

Transistor Code		PMXB65UPE
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN1010D-3
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	3.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.072Ohm
Power Dissipation (Maximum)	PD	0.317W
Drain-Source Capacitance		167pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		22nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		6.7nC

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