PMXB65ENE MOSFET Transistor

The PMXB65ENE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMXB65ENE transistor as follows.

PMXB65ENE Transistor Specification

Transistor Code		PMXB65ENE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN1010D-3
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.067Ohm
Power Dissipation (Maximum)	PD	0.4W
Drain-Source Capacitance		40pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		6nC

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