PMXB360ENEA MOSFET Transistor

The PMXB360ENEA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMXB360ENEA transistor as follows.

PMXB360ENEA Transistor Specification

Transistor Code		PMXB360ENEA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN1010D-3
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.45Ohm
Power Dissipation (Maximum)	PD	0.4W
Drain-Source Capacitance		20pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		3.5nS
Gate-Threshold Voltage (Maximum)		2.7V
Total Gate Charge		3nC

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