PMXB350UPE MOSFET Transistor

The PMXB350UPE is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMXB350UPE transistor as follows.

PMXB350UPE Transistor Specification

Transistor Code		PMXB350UPE
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN1010D-3
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	1.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.447Ohm
Power Dissipation (Maximum)	PD	0.36W
Drain-Source Capacitance		16.5pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS
Gate-Threshold Voltage (Maximum)		0.95V
Total Gate Charge		1.25nC

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