PMXB120EPE MOSFET Transistor

The PMXB120EPE is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMXB120EPE transistor as follows.

PMXB120EPE Transistor Specification

Transistor Code		PMXB120EPE
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN1010D-3
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.12Ohm
Power Dissipation (Maximum)	PD	0.4W
Drain-Source Capacitance		41pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		6.2nC

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