PMV65UN MOSFET Transistor

The PMV65UN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMV65UN transistor as follows.

PMV65UN Transistor Specification

Transistor Code		PMV65UN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT23
Transistor SMD Code		ED
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	2.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.076Ohm
Power Dissipation (Maximum)	PD	0.31W
Drain-Source Capacitance		52pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18nS
Gate-Threshold Voltage (Maximum)		1V

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