PMV130ENEA MOSFET Transistor

The PMV130ENEA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMV130ENEA transistor as follows.

PMV130ENEA Transistor Specification

Transistor Code		PMV130ENEA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-236AB
Transistor SMD Code		*JX
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.12Ohm
Power Dissipation (Maximum)	PD	0.46W
Drain-Source Capacitance		27pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		2.4nC

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