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PMT200EN MOSFET Transistor

The PMT200EN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMT200EN transistor as follows.

Circuit diagram symbol of the PMT200EN transistor

PMT200EN Transistor Specification

Transistor Code PMT200EN
Transistor Type MOSFET
Control Channel Type N-Channel
Package SC-73
Transistor SMD Code T200EN
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 1.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.235Ohm
Power Dissipation (Maximum) PD 0.8W
Drain-Source Capacitance 35pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 5nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 7.4nC

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