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PMPB95ENEA MOSFET Transistor

The PMPB95ENEA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMPB95ENEA transistor as follows.

Circuit diagram symbol of the PMPB95ENEA transistor

PMPB95ENEA Transistor Specification

Transistor Code PMPB95ENEA
Transistor Type MOSFET
Control Channel Type N-Channel
Package DFN2020MD-6
Transistor SMD Code 2A
Drain-Source Voltage (Maximum) VDS 80V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 2.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.105Ohm
Power Dissipation (Maximum) PD 1.6W
Drain-Source Capacitance 43pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 4nS
Gate-Threshold Voltage (Maximum) 2.7V
Total Gate Charge 9.9nC

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