PMPB85ENEA MOSFET Transistor

The PMPB85ENEA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMPB85ENEA transistor as follows.

PMPB85ENEA Transistor Specification

Transistor Code		PMPB85ENEA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN2020MD-6
Transistor SMD Code		2C
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.095Ohm
Power Dissipation (Maximum)	PD	1.6W
Drain-Source Capacitance		40pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		3.5nS
Gate-Threshold Voltage (Maximum)		2.7V
Total Gate Charge		6.2nC

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