PMPB215ENEA MOSFET Transistor

The PMPB215ENEA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMPB215ENEA transistor as follows.

PMPB215ENEA Transistor Specification

Transistor Code		PMPB215ENEA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN2020MD-6
Transistor SMD Code		2B
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.23Ohm
Power Dissipation (Maximum)	PD	1.6W
Drain-Source Capacitance		25pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		2nS
Gate-Threshold Voltage (Maximum)		2.7V
Total Gate Charge		4.8nC

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