PMPB19XP MOSFET Transistor

The PMPB19XP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMPB19XP transistor as follows.

PMPB19XP Transistor Specification

Transistor Code		PMPB19XP
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN2020MD-6
Transistor SMD Code		1R
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	7.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0225Ohm
Power Dissipation (Maximum)	PD	1.7W
Drain-Source Capacitance		250pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		54nS
Gate-Threshold Voltage (Maximum)		0.9V
Total Gate Charge		28.8nC

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