PMPB12UN MOSFET Transistor

The PMPB12UN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMPB12UN transistor as follows.

PMPB12UN Transistor Specification

Transistor Code		PMPB12UN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN2020MD-6
Transistor SMD Code		1F
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	7.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	1.7W
Drain-Source Capacitance		233pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		8.8nC

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