PMGD290XN MOSFET Transistor

The PMGD290XN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMGD290XN transistor as follows.

PMGD290XN Transistor Specification

Transistor Code		PMGD290XN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSSOP6
Drain-Source Voltage (Maximum)	VDS	20V
Drain Current (Maximum)	ID	0.86A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.35Ohm
Power Dissipation (Maximum)	PD	0.41W

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