PMGD290UCEA MOSFET Transistor

The PMGD290UCEA is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMGD290UCEA transistor as follows.

PMGD290UCEA Transistor Specification

Transistor Code		PMGD290UCEA
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		TSSOP6
Transistor SMD Code		YD*
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.725A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.38Ohm
Power Dissipation (Maximum)	PD	0.28W
Drain-Source Capacitance		15pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		4nS
Gate-Threshold Voltage (Maximum)		0.95V
Total Gate Charge		0.45nC

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