PMGD280UN MOSFET Transistor

The PMGD280UN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMGD280UN transistor as follows.

PMGD280UN Transistor Specification

Transistor Code		PMGD280UN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSSOP6
Drain-Source Voltage (Maximum)	VDS	20V
Drain Current (Maximum)	ID	0.87A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.34Ohm
Power Dissipation (Maximum)	PD	0.4W

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