PMGD175XN MOSFET Transistor

The PMGD175XN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMGD175XN transistor as follows.

PMGD175XN Transistor Specification

Transistor Code		PMGD175XN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSSOP6
Transistor SMD Code		U7*
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	0.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.225Ohm
Power Dissipation (Maximum)	PD	0.26W
Drain-Source Capacitance		30pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		11.5nS
Gate-Threshold Voltage (Maximum)		1.5V
Total Gate Charge		0.7nC

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