PMGD130UN MOSFET Transistor

The PMGD130UN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMGD130UN transistor as follows.

PMGD130UN Transistor Specification

Transistor Code		PMGD130UN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSSOP6
Transistor SMD Code		U8*
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	1.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.145Ohm
Power Dissipation (Maximum)	PD	0.26W
Drain-Source Capacitance		38pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		17nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		0.88nC

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