PMDXB600UNE MOSFET Transistor

The PMDXB600UNE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMDXB600UNE transistor as follows.

PMDXB600UNE Transistor Specification

Transistor Code		PMDXB600UNE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN1010B-6
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.62Ohm
Power Dissipation (Maximum)	PD	0.265W
Drain-Source Capacitance		5.4pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9.2nS
Gate-Threshold Voltage (Maximum)		0.95V
Total Gate Charge		0.4nC

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