PMDXB550UNE MOSFET Transistor

The PMDXB550UNE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMDXB550UNE transistor as follows.

PMDXB550UNE Transistor Specification

Transistor Code		PMDXB550UNE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN1010B-6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.59A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.67Ohm
Power Dissipation (Maximum)	PD	0.285W
Drain-Source Capacitance		5.8pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7nS
Gate-Threshold Voltage (Maximum)		0.95V
Total Gate Charge		0.6nC

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