PMDXB1200UPE MOSFET Transistor

The PMDXB1200UPE is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMDXB1200UPE transistor as follows.

PMDXB1200UPE Transistor Specification

Transistor Code		PMDXB1200UPE
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DFN1010B-6
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	0.41A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.4Ohm
Power Dissipation (Maximum)	PD	0.285W
Drain-Source Capacitance		5.9pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		4nS
Gate-Threshold Voltage (Maximum)		0.95V
Total Gate Charge		0.7nC

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